EUV lithography system and method with optimized throughput and stability

ABSTRACT

The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.

This application claims the benefit of U.S. Provisional Application62/133,882 entitled “EUV SCANNER AND METHOD WITH OPTIMIZED THROUGHPUTAND STABILITY,” filed Mar. 16, 2015, herein incorporated by reference inits entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. Such scaling down has also increased the complexity ofIC processing and manufacturing. For these advances to be realized,similar developments in IC processing and manufacturing are needed. Forexample, the need to perform higher resolution lithography processesgrows. One lithography technique is extreme ultraviolet lithography(EUVL). The EUVL employs scanners using light in the extreme ultraviolet(EUV) region, having a wavelength of about 1-100 nm. EUV scanners usereflective rather than refractive optics, i.e., mirrors instead oflenses.

Therefore, while existing lithography techniques have been generallyadequate for their intended purposes, they have not been entirelysatisfactory in every aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic view of an EUV lithography system with a laserproduced plasma (LPP) EUV radiation source, constructed in accordancewith some embodiments.

FIG. 2 is a diagrammatic view of the EUV radiation source in the EUVlithography system of FIG. 1, constructed in accordance with someembodiments.

FIG. 3 is a diagrammatic view of the EUV radiation source in the EUVlithography system of FIG. 1, constructed in accordance with someembodiments.

FIG. 4 is a diagrammatic view of the target material droplets used togenerate plasma and EUV energy from the plasma in the EUV lithographysystem of FIG. 1, constructed in accordance with some embodiments.

FIG. 5 illustrates various formulas and calculations used to analyze thedose margin, constructed in accordance with some embodiments.

FIG. 6 is a flowchart of a method, constructed in accordance with someembodiments.

FIG. 7 is a flowchart of a method, constructed in accordance with someembodiments.

FIG. 8 illustrates a dose margin lookup table used in the method of FIG.7, constructed in accordance with some embodiments.

FIG. 9 is a diagrammatic view of the droplets used to generate plasmaand EUV energy from the plasma, constructed in accordance with someembodiments.

FIG. 10 is a diagrammatic view of the droplets used to generate plasmaand EUV energy from the plasma, constructed in accordance with someembodiments.

FIG. 11 is a flowchart of a method, constructed in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The apparatusmay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein may likewise beinterpreted accordingly.

FIG. 1 is a schematic view diagram of a lithography system 10,constructed in accordance with some embodiments. The lithography system10 may also be generically referred to as a scanner that is operable toperform lithography exposing processes with respective radiation sourceand exposure mode. In the present embodiment, the lithography system 10is an extreme ultraviolet (EUV) lithography system designed to expose aresist layer by EUV light. The resist layer is a suitable materialsensitive to the EUV light. The EUV lithography system 10 employs aradiation source 12 to generate EUV light, such as EUV light having awavelength ranging between about 1 nm and about 100 nm. In oneparticular example, the radiation source 12 generates an EUV light witha wavelength centered at about 13.5 nm. Accordingly, the radiationsource 12 is also referred to as EUV radiation source 12. In the presentembodiment, the EUV radiation source 12 utilizes a mechanism oflaser-produced plasma (LPP) to generate the EUV radiation, which will befurther described later.

The lithography system 10 also employs an illuminator 14. In variousembodiments, the illuminator 14 includes various refractive opticcomponents, such as a single lens or a lens system having multiplelenses (zone plates) or alternatively reflective optics (for EUVlithography system), such as a single mirror or a mirror system havingmultiple mirrors in order to direct light from the radiation source 12onto a mask stage 16. In the present embodiment where the radiationsource 12 generates light in the EUV wavelength range, reflective opticsis employed.

The lithography system 10 includes the mask stage 16 configured tosecure a mask 18. In some embodiments, the mask stage 16 includes anelectrostatic chuck (e-chuck) to secure the mask 18. This is becausethat gas molecules absorb EUV light and the lithography system for theEUV lithography patterning is maintained in a vacuum environment toavoid the EUV intensity loss. In the disclosure, the terms of mask,photomask, and reticle are used to refer to the same item. In thepresent embodiment, the lithography system 10 is an EUV lithographysystem, and the mask 18 is a reflective mask. One exemplary structure ofthe mask 18 is provided for illustration. The mask 18 includes asubstrate with a suitable material, such as a low thermal expansionmaterial (LTEM) or fused quartz. In various examples, the LTEM includesTiO₂ doped SiO₂, or other suitable materials with low thermal expansion.The mask 18 includes a reflective multiple layers (ML) deposited on thesubstrate. The ML includes a plurality of film pairs, such asmolybdenum-silicon (Mo/Si) film pairs (e.g., a layer of molybdenum aboveor below a layer of silicon in each film pair). Alternatively, the MLmay include molybdenum-beryllium (Mo/Be) film pairs, or other suitablematerials that are configurable to highly reflect the EUV light. Themask 18 may further include a capping layer, such as ruthenium (Ru),disposed on the ML for protection. The mask 18 further includes anabsorption layer, such as a tantalum boron nitride (TaBN) layer,deposited over the ML. The absorption layer is patterned to define alayer of an integrated circuit (IC). Alternatively, another reflectivelayer may be deposited over the ML and is patterned to define a layer ofan integrated circuit, thereby forming an EUV phase shift mask.

The lithography system 10 also includes a projection optics module (orprojection optics box (POB) 20 for imaging the pattern of the mask 18 onto a semiconductor substrate 22 secured on a substrate stage 24 of thelithography system 10. In the present embodiment, the POB 20 hasreflective optics for projecting the EUV light. The EUV light, whichcarries the image of the pattern defined on the mask, is directed fromthe mask 18 and is collected by the POB 20. The illuminator 14 and thePOB 20 are collectively referred to an optical module of the lithographysystem 10.

The lithography system 10 also includes the substrate stage 24 to securethe semiconductor substrate 22. In the present embodiment, thesemiconductor substrate 22 is a semiconductor wafer, such as a siliconwafer or other type of wafer to be patterned. The semiconductorsubstrate 22 is coated with the resist layer sensitive to the radiationbeam, such as EUV light in the present embodiment. Various componentsincluding those described above are integrated together and are operableto perform lithography exposing processes.

In some embodiments, the lithography system 10 includes an EUV energymonitor 26 designed to monitor the EUV intensity or energy from the EUVradiation source 12. For example, the EUV energy monitor 26 includes anEUV sensing element, such as a diode, designed to be sensitive to theEUV light and configured to effectively detect the EUV light. In otherexamples, the EUV energy monitor 26 includes a plurality of diodesconfigured in an array to effectively detect the EUV light formonitoring purpose.

In some embodiments, the lithography system 10 includes a plasmamonitoring module 28 to monitor plasma stability of the radiation source12. The plasma condition of the radiation source 12 varies over time.For example, a target material is used to generate plasma and thecondition of the target material changes over time, such as dropletsize, the ionized rate from the target material changes, and the plasmaconcentration changes accordingly. The variation of plasma conditionalso causes the variation of the EUV intensity in the lithographyexposing process. In some examples, the plasma monitoring module 28includes a mechanism to monitor the utilization of the target materialdroplets in the dose margin. The plasma monitoring module 28 tracks thehistoric data of the utilization of the target material droplets for thesemiconductor wafers previously processed in the lithography system 10.The plasma monitoring module 28 is integrated with the radiation source12. In some examples, the plasma monitoring module 28 is embedded in theradiation source 12. The dose margin and other terms will be furtherdescribed at later stage.

In some other embodiments, the function of the plasma monitoring module28 may be implemented by the EUV energy monitor 26. For example, thedose error is related to the plasma instability, through monitoring theEUV energy by the EUV energy monitor 26, the dose error is extractedfrom the monitored EUV energy. In this case, the plasma monitoringmodule 28 is eliminated or combined with the EUV energy monitor 26.

The lithography system 10 may further include other modules or beintegrated with (or be coupled with) other modules. In some embodiments,the lithography system 10 includes a database to maintain a dose marginlookup table and historic fabrication data. In some embodiments, thelithography system 10 includes a dose margin extraction module toprovide a dose margin to a lithography exposing process applied to thewafer 22. In furtherance of the embodiments, the dose margin isdetermined according to the dose margin lookup table. In someembodiments, the lithography system 10 includes a lookup tablemaintaining module designed to maintain the dose margin lookup table. Infurtherance of the embodiments, the lookup table maintaining module iscoupled with the database and the plasma monitoring module. The lookuptable maintaining module updates the dose margin lookup table accordingto the dose margin variation from the plasma monitoring module.

In some embodiments, the lithography system 10 includes a gas supplymodule designed to provide hydrogen gas to the radiation source 12,which effectively protects radiation source 12 (such as the collector)from the contaminations. In other embodiments, the lithography system 10includes magnet configured to guide the plasma by the correspondingmagnetic field.

Particularly, the radiation source 12 is further illustrated in FIG. 2in a diagrammatical view, constructed in accordance with someembodiments. The radiation source 12 employs a laser produced plasma(LPP) mechanism to generate plasma and further generate EUV light fromthe plasma. The radiation source 12 includes a laser 30, such as pulsecarbon dioxide (CO₂) laser to generate a laser beam 32. The laser beamis directed through an output window 34 integrated with a collector(also referred to as LPP collector or EUV collector) 36. The outputwindow 34 adopts a suitable material substantially transparent to thelaser beam. The collector 36 is designed with proper coating materialsand shape, functioning as a mirror for EUV collection, reflection andfocus. In some embodiments, the collector 36 is designed to have anellipsoidal geometry. In some embodiments, the coating material of thecollector 36 is similar to the reflective multilayer of the EUV mask 18.In some examples, the coating material of the collector 36 includes a ML(such as a plurality of Mo/Si film pairs) and may further include acapping layer (such as Ru) coated on the ML to substantially reflect theEUV light. In some embodiments, the collector 36 may further include agrating structure designed to effectively scatter the laser beamdirected onto the collector 36. For example, a silicon nitride layer iscoated on the collector 36 and is patterned to have a grating pattern.

The laser beam 32 is directed to heat a target material 38, therebygenerating high-temperature plasma, which further produces EUV radiation(or EUV light) 40. In the present embodiment, the target material 38 isTin (Sn). The target material 38 is delivered in droplets. Those targetmaterial droplets (such as Tin droplets) are also simply referred to asdroplets. The EUV radiation 40 is collected by the collector 36. Thecollector 36 further reflects and focuses the EUV radiation for thelithography exposing processes.

The radiation source 12 is configured in an enclosed space (referred toas a source vessel). The source vessel is maintained in a vacuumenvironment since the air absorbs the EUV radiation. In someembodiments, the plasma monitoring module 28 is embedded in theradiation source 12 and is configured to monitor the plasma condition ofthe radiation source 12.

The radiation source 12 may further include more other componentsintegrated together, such as those illustrated in FIG. 3. FIG. 3 is adiagrammatical view of the radiation source 12, constructed inaccordance with some embodiments. The radiation source 12 employs a LPPmechanism. The radiation source 12 includes a laser 30, such as pulseCO₂ laser to generate laser beam 32. The laser beam 32 is directed by abeam delivery system 42, such as one or more mirrors configured, to afocus lens 44 to focus the laser beam 32. The laser beam 32 is furtherprojected through the output window 34 integrated with a collector 36.The laser beam 32 is focused to the target material 38, such as Tindroplets, thereby generating high-temperature plasma. The Tin dropletsare generated by a Tin droplet generator 46. A Tin catcher 48 is furtherconfigured to catch the Tin droplets. Thus generated high-temperatureplasma further produces EUV radiation 40, which is collected by thecollector 36. The collector 36 further reflects and focuses the EUVradiation for the lithography exposing processes. The pulses of thelaser 30 and the droplet generating rate of the Tin droplet generator 46are controlled to be synchronized such that the Tin droplets 38 receivepeak powers consistently from the laser pulses of the laser 30. In someexamples, the tin droplet generation frequency ranges from 20 kHz to 100kHz. For example, the laser 30 includes a laser circuit designed tocontrol the generation of the laser pulses. The laser circuit and Tindroplet generator 46 are coupled to synchronize the generation of thelaser pulses and the generations of the Tin droplets.

In some embodiments, the radiation source 12 further includes a centralobscuration 49 designed and configured to obscure the laser beam 32. Theradiation source 12 also includes an intermediate focus (IF)-cap module50, such as an IF-cap quick-connect module configured to provideintermediate focus 51 to the EUV radiation 40. The IF-cap module 50 mayadditionally function to obscure the laser beam 32.

The radiation source 12 is configured in an enclosed space (referred toas a source vessel). The source vessel is maintained in a vacuumenvironment since the air absorbs the EUV radiation. The radiationsource 12 may be further integrated with or coupled with otherunits/modules. For example, a gas supply module is coupled with theradiation source 12, thereby providing hydrogen gas for variousprotection functions, which include effectively protecting the collector36 from the contaminations by Tin particles (Tin debris).

The target material droplets 38 and EUV radiation 40, and thecorresponding mechanism are further illustrated in FIG. 4. The targetmaterial droplets are grouped into bursts 52, which are separated byintervening time and intervening droplets 54. In the presentembodiments, the intervening droplets 54 will not be excited by thelaser beam 30 during the lithography exposing process.

The radiation source 12 provides a series of bursts 52 during alithography exposing process. Each burst 52 includes a plurality oftarget material droplets and is configured to provide certain EUV energy(referred to as burst target energy or BTE) during the lithographyexposing process. When a semiconductor substrate 22 is exposed using theEUV energy by the lithography system 10 during the lithography system10, the exposure dosage can be reached when each burst 52 contributesEUV energy to the burst target energy. The target material droplets ineach burst are defined to two categories: dose droplets 56 and margindroplets 58. During the lithography exposing process, the dose droplets56 in each burst are to be excited by the laser to generate plasma andaccordingly plasma-generated EUV radiation with EUV energy reaching theburst target energy. The margin droplets 58 in each burst 52 arereserved for dose control and used as a backup to the dose droplets, inorder to maintain the EUV energy of the burst to reach the burst targetenergy. The margin droplets 58 are collectively referred to as dosemargin. Due to the instability of the plasma intensity, not all ofdroplets contribute nominal EUV energy. For example, when the lasergenerated plasma from one dose droplet has less density, the EUV energycollected from that dose droplet will be less than the normal level.When the EUV energy generated from the dose droplets 56 in the burst 52cannot reach the burst target energy, the margin droplets 58 or a subsetthereof are excited to contribute additional EUV energy such that thetotal EUV energy from the burst 52 reaches the burst target energy. Thenumber of target material droplets in each burst is Nt. The number ofthe dose droplets 56 in each burst is designed to be Nd and the numberof the margin droplets 56 in each burst is designed to be Nm. There is arelationship among these parameters as Nt=Nd+Nm. Therefore, when the Ntis given, increasing the dose margin will decrease the burst targetenergy.

The EUV energy 40 is also illustrated in FIG. 4. Each burst needs toprovide burst target energy 60 to meet the exposure dosage. This energyis accumulated EUV radiation energy from the dose droplets 56 in thatburst. The burst target energy is the EUV energy expected to becollected from the burst in order to reach the exposure dosage. As oneexample for illustration, assume that a burst has 5 droplets and eachdroplet generates 1.5 millijoule (mj) EUV energy. If BTE is 4.5 mj, then3 droplets will accumulate BTE and the rest 2 droplets in the burst maybe used as dose margin. Thus, 3 droplets in the burst are used as dosedroplets and 2 droplets are reserved as margin droplets. When a dropletis not to be excited, the system 10 provides a mechanism to achievethis. For example, the laser generator of the laser 30 will control thepulses of the laser beam such that the corresponding laser pulse isoffset from hitting the droplet.

When the EUV light intensity doesn't reach the setting target-BTE, themargin droplets or a subset thereof are excited to compensate for theEUV energy shortage. In the existing mechanism, the dose margin isdetermined without consideration of the exposure dosage and EUVradiation stability. If the EUV intensity is below the setting target(which is referred to as a dose error), the margin droplets will beexcited to generate EUV light. The number Nm of the margin droplets 58is large enough to provide enough compensation for EUV shortage in worstcase. However, there is a dilemma that how many droplets (Nm) in a burstneed to be reserved as margin droplets for dose control. When Nm issmaller, the dose margin may not be enough in the worst case. When Nm islarger and more droplets are used for the dose control, the dose marginis enough to compensate EUV energy shortage. However, the drawback isthe number Nd of the dose droplets 56 is limited. In this case, BTE isreduced and the throughput is reduced as well.

In the present embodiment, the target material droplets are moving at afixed rate; the laser pulses are generated with a fixed frequency; andthe wafer scan speed during the lithography exposing process is variedaccording to the exposure dosage. The existing method only providesgeneric dose margin (Nm) regardless the exposure dosage (and the waferscan speed) and plasma instability. However, the dose margin in need isdependent the wafer scan speed during the lithography exposing process.On one side, when the exposure dosage is greater, the scan speed isslower to accumulate higher EUV energy from more bursts to meet theexposure dosage. The throughput is accordingly lower. On another side,the faster the scan speed is, the larger number Nm of margin droplets 58the system 10 needs to match the plasma instability and EUV energyshortage. To ensure all of products are processed in the respectiveproduct specifications, the product with the highest scan speed willlimit the minimum dose margin. However, the other products do not needso large dose margin. Accordingly, their throughput will be sacrificeddue to excessive dose margin.

This is clear from our following analysis, as illustrated in FIG. 5. Dueto the plasma instability, the EUV energy from a burst is not fixed butis predictable in term of probability. Assume that the EUV energyaccumulated from a first burst is in a Gaussian distribution, which isdescribed by a Gaussian distribution function 62 in FIG. 5. In thefunction 62, the variable x is the EUV energy; B_(a)(x) is theprobability of the first burst having the EUV energy of x; μ_(a) is theaverage energy from the first burst; σ_(a) is standard deviation that isassociated with the instability of the plasma generated from the firstburst; and σ_(a) ² is the variance. Similarly, assume that the EUVenergy accumulated from a second burst is in another Gaussiandistribution, which is described by a Gaussian distribution function 64.In the function 64, the variable x is the EUV energy; B_(b)(x) is theprobability of the second burst having the EUV energy of x; μ_(b) is theaverage energy from the second burst; σ_(b) is standard deviation thatis associated with the instability of the plasma generated from thesecond burst; and σ_(b) ² is the variance.

The EUV energy accumulated from both the first and second bursts has acollective distribution 66 as a convolution of the first distribution 62and the second distribution. The collective distribution 66 is anotherGaussian distribution where the variable x is the EUV energy from thefirst and second bursts; B_(a+b)(x) is the probability of the first andsecond bursts having the EUV energy of x; μ_(a+b) is the average energyfrom the first and second bursts; and the corresponding variance ofB_(a+b)(x) is σ_(a) ²+σ_(b) ² is standard deviation, which is associatedwith the plasma instabilities of both the first and second bursts. Ifthe exposure dosage is further accumulated from a third burst having athird distribution, the collective distribution is determined by aconvolution from B_(a+b)(x) and the third distribution. Then a fourthburst, a fifth burst, and so on.

Assume that the exposure dosage is accumulated from N bursts and furtherassume that all N bursts are identical and obey a same Gaussiandistribution (same μ and σ). In this case, the collective EUV energydistribution function B_(N)(x) 68 is simplified to a Gaussiandistribution with the average energy N_(μ) and the standard deviation √Nσ. Note that the average energy is increased by a factor N but thestandard deviation is increased by a factor √N. Accordingly, the doseerror is proportional to 1/√N as described by a formula 70 in FIG. 5. Asthe exposure dosage is proportional to the number N, the formula 70indicates that the exposure dosage is greater, the dose error is less.When the exposure dosage is decreased, the dose error is increased.

Furthermore, our experiments and analysis of the historic data revealthat the plasma instability may vary over time. In other words, thestandard deviation σ varies over time. For examples, the plasmastability is related to the lifetime of the target material (such asTin). When the Tin material is at the later lifetime, the Tin dropletshave more fluctuation. Accordingly, the plasma generated thereby, andthe EUV energy generated by the plasma, is less stable and has morefluctuation. Thus, the dose error may vary from time to time and fromwafer to wafer.

From the above analysis, the minimum dose margin depends on thecorresponding exposure dosage and further depends on the plasmainstability (or generally the instability of the EUV intensity). Thedisclosed method 76, along with the system 10 implementing the same,provides an effective approach to dynamically determine the dose margin(Nm). In the method 76, the dose margin or more specially the number Nmof the margin droplets is determined per wafer. Specifically, Nm isdetermined according to the exposure dosage and the plasma instability.

FIG. 6 illustrates a flowchart of the method 76 for a EUV lithographyprocess implemented by the lithography system 10, constructed inaccordance with some embodiments.

The method 76 includes an operation 78 by loading a EUV mask, such asmask 18 to the lithography system 10 that is operable to perform a EUVlithography exposing process. The mask 18 includes an IC pattern to betransferred to a semiconductor substrate, such as the wafer 22. Theoperation 78 may further include various steps, such as securing themask 18 on the mask stage 16 and performing an alignment.

The method 76 includes an operation 80 by loading the wafer 22 to thelithography system 10. The wafer 22 is coated with a resist layer. Inthe present embodiment, the resist layer is sensitive to the EUVradiation from the radiation source 12 of the lithography system 10.

The method 76 includes an operation 82 by determining the dose margin towafer 22. In the operation 82, the determining of the dose margin iswafer-based and is determined according to the exposure dosage and theplasma instability. In the present case, determining of the dose marginis determining the number Nm of the margin droplets 58 in a burst.

Particularly, Nm is determined according to the exposure dosage. When aproduct is different, the exposure dosage may be different. As describedby the formula 70 in FIG. 5, when the exposure dosage ED is increased,the parameter N is increased proportionally; and the dose error isstatistically decreased by the factor 1/√N. In other words, the doseerror ∝1/√ED and Nm∝1/√ED.

In the operation 82, determining the parameter Nm is achieved by usingmanufacturing data, a formula, a lookup table, or a combination thereof.In the first example, the dose error data from the previously processedwafers are collected and used to determine Nm. The previously processedwafers are those wafers that are exposed by the lithography system 10with the same exposure dosage of the wafer 22.

In some embodiments, the dose margin is determined by a method 90 usinga dose margin lookup table. FIG. 7 is a flowchart of the method 90 andFIG. 8 is an exemplary dose margin lookup table 98. The method 90 isdescribed with reference to FIGS. 6-8.

The method 90 includes an operation 92 by building a dose margin lookuptable, such as the dose margin lookup table 98. The dose margin lookuptable is built according to manufacturing historic data related to thelithography exposing process (by the lithography system 10), such asdose error. The dose margin lookup table 98 relates exposure dosage,dose margin and burst target energy. In the lookup table 98, the firstcolumn is the exposure dosage (“PR dose”) in a proper unit, such asmillijoule (mJ); the second column is the dose margin (“dose marginneeded”) with percentage; and the second column is the burst targetenergy (“target energy”) in a proper unit, such mJ. In operation 92, thedose margin lookup table is built up according to the exposure dosage,as described above, such that the dose margin is minimized to be enoughfor EUV energy compensation with maximized burst target energy andmaximized throughput of the lithography exposing process. Once the dosemargin lookup table is built up, it is maintained by the operation 96and used to determine the dose margin to each wafer at the operation 94.At the operation 94, the dose margin is determined according to theexposure dosage by looking up the table 98. If the exposure dosage isnot in the table but is between two adjacent exposure dosages, it can bedetermined by a proper technique, such as interpolation. Thecorresponding burst target energy is provided in the table 98 as well.At the operation 96, the dose margin is monitored for its variation andthe table 98 is adjusted accordingly. For example, from the monitoreddata of the lithography exposing process, if the dose margin is shiftedaway from the corresponding dose margin (such as 20%), the table 90 isadjusted such that the dose margin is adjusted back to the originalvalue (such as 20%). Thus, the table 98 is dynamically maintainedaccording to the dose margin variation, which is monitored through themanufacturing data, such as by the EUV energy monitor 26.

In some embodiments, the parameter Nm is determined using the formula 70or Nm∝1/√ED. In another example, a reference Nm0 is determined to areference exposure dosage ED0 using the manufacturing data; and Nm toother exposure dosages ED is determined, relative to the referenceparameters Nm0 and ED0, using the formula Nm∝1/√ED or Nm=Nm0 √ED0/ED.Thus, the dose margin is optimized according to the exposure dosage andthe throughput is maximized accordingly.

In the present embodiment, Nm is determined additionally according tothe plasma instability. Since plasma condition varies from wafer towafer, the dose margin may be determined to different values even thoughthe exposure dosages of the two wafers are same. In the presentembodiment, the plasma condition is monitored and the parameter Nm isadjusted according to the plasma condition, such as through a feedforward mode. In this case, the plasma condition from a first wafer isfeed forward to a subsequent wafer such that the dose margin (Nm) of thesubsequent wafer back is adjusted according to the plasma condition fromthe first wafer, since the plasma condition variation is usuallycontinuous. In another embodiment, the parameter Nm is adjustedaccording to the plasma condition extracted from the same wafer througha feedback mode. For example, when the monitored EUV energy has higherdose error, the dose margin (Nm) associated with the wafer may beadjusted to a high value.

In some embodiments, the plasma condition may be monitored by the plasmamonitoring module 28. In some embodiments, the plasma condition may bemonitored by the EUV energy monitor 26. In this case, the plasma monitormodule 28 and the EUV energy monitor 26 can be combined into onemonitoring module. As noted above, the dose error is related to theplasma condition. The EUV energy monitor 26 monitors the EUV energy forthe dose error and controls to excite margin droplet(s) 58 according tothe dose error. The monitored dose error is not only used to excite themargin droplet(s) 58 for compensating EUV energy shortage but also usedas an indicator of the plasma condition to adjust the dose margin (Nm).

It is noted that the dose margin or the parameter Nm is unnecessarily aninteger and can be set to any suitable real number. This is possiblesince a plurality of bursts may be used to expose a same spot to reachthe exposure dosage. The dose margin can be unevenly distributed in theplurality of bursts such that the average dose margin matches theparameter Nm. For example, 10 bursts are used to expose the same spot,so 10 times of the burst target energy reaches the exposure dosage. Whenthe parameter Nm is 2.4, then four of the bursts each have 3 dosedroplets and the rest 6 bursts each have 2 dose droplets. Therefore,among the 10 bursts, the average number of the dose droplets is 2.4.

In the operation 84, the dose margin is dynamically determined per waferaccording to the exposure dosage (associated with wafer scan speed) andthe EUV radiation stability (associated with plasma instability). If thewafer scan speed is lower (the exposure dosage is higher), then BTE isincreased and the dose margin is reduced to have high throughput.Furthermore, the dose margin is determined additionally accordingly tothe plasma stability. The wafers in the same lot may have the sameexposure dosage but different plasma stability. Therefore, the dosemargins for the wafers in the same lot may be determined to be differentsuch that the margin droplets are enough to compensate the EUV shortageand the number of the dose droplets is maximized.

In the present embodiments, the dose margin (Nm) is collectivelydetermined by both exposure dosage (wafer scan speed) and plasmastability (EUV stability). For example, the initial dose margin is firstdetermined by the exposure dosage. Therefore, the wafers in the sameproduct for the same exposing process may have the same initial dosemargin. The initial dose margin is further adjusted according to theplasma stability to provide a final dose margin to a particular wafer.In furtherance of the example, the plasma stability is lower (the plasmainstability is higher), the final dose margin is adjusted to be higher.The adjusted amount may be related to the dose errors in the previouslyprocessed wafer (or wafers).

In another example, the burst energy is monitored for the plasmastability. The burst energy is defined as the EUV energy accumulatedfrom the dose droplets in a burst. In this case, the plasma stabilitymonitoring module 28 is designed to monitor the burst energy in thepreviously processed wafer(s). When the burst energy reaches the BTE, nodroplet in the dose margin will be used since no energy compensation isneeded. The burst energy distribution can be used as an indicator of theplasma stability. In previously processed wafers, when the burst energyhas a distribution in a greater range or the distribution range getsgreater in a trend, the plasma stability is less. The dose margin isadjusted according to the burst energy distribution.

The method 76 includes an operation 84 by performing a lithographyexposing process to the wafer 22 in the lithography system 10. In theoperation 84, the laser 30 and the tin droplet generator 46 aresynchronized (specifically, laser pulses and Tin droplet generation aresynchronized) through a suitable mechanism, such as a control circuitwith timer to control and synchronize the both. The synchronized laser30 excites the dose droplets 56 and generates plasma, thereby generatingthe EUV radiation. During the operation 84, the generated EUV radiationis illuminated on the mask 18 (by the illuminator 14), and is furtherprojected on the resist layer coated on the wafer 22 (by the POB 20),thereby forming a latent image on the resist layer. In the presentembodiment, the lithography exposing process is implemented in a scanmode.

Particularly, during the lithography exposing process, the dose droplets56 are excited. The EUV energy is also monitored, such as by the EUVenergy monitor 26. When a dose error occurs (the accumulated burstenergy is less than BTE), the margin droplet(s) 58 in the dose margin ora fraction thereof is (are) excited by the laser 30 to provideadditional EUV energy in compensating the EUV energy shortage, in orderto reach BTE (thereby reaching the exposure dosage). Accordingly, thelaser pulse and the tin droplet generation are synchronized to excitethe corresponding margin droplet.

In some embodiments, a pre-compensation is used to provide additionaldose margin without sacrificing the throughput. In this case, any unusedmargin droplets in one burst are used in advance to compensate thepotential EUV energy shortage. In the existing method, if a margindroplet in a burst is not used to compensate the dose error of thatburst, that margin droplet will never be used and will be wasted. In thedisclosed method, a margin droplet in one burst is excited and used to asubsequent burst. Thus, without increasing Nm (the budge to the dosemargin), the dose margin is increased. The operation “pre-compensation”and other related concepts are further described at later stage.

The method 76 may include other operations to complete the lithographyexposing process. For example, the method 76 may include an operation 86by developing the exposed resist layer to form a resist pattern having aplurality of openings defined thereon. In one example, the resist layeris positive tone; the exposed portion of the resist layer is removed bythe developing solution. In another example, the resist layer isnegative tone; the exposed portion of the resist layer remains; and thenon-exposed portion is removed by the developing solution. In yetanother example, the resist layer is negative tone and the developingsolution is negative tone; the exposed portion of the resist layer isremoved by the developing solution. In yet another example, the resistlayer is positive tone and the developing solution is negative tone; theexposed portion of the resist layer remains; and the non-exposed portionis removed by the developing solution.

Particularly, after the lithography exposing process at the operation84, the wafer 22 is transferred out of the lithography system 10 to adeveloping unit to perform the operation 86. The method 76 may furtherinclude other operations, such as various baking steps. As one example,the method 76 may include a post-exposure baking (PEB) step between theoperations 84 and 86.

The method 76 may further include other operations, such as an operation88 to perform a fabrication process to the wafer through the openings ofthe resist pattern. In one example, the fabrication process includesapplying an etch process to the semiconductor substrate 22 or a materiallayer on the semiconductor substrate using the resist pattern as an etchmask. In another example, the fabrication process includes performing anion implantation process to the semiconductor substrate 22 using theresist pattern as an implantation mask. After the operation 88, theresist layer may be removed by wet stripping or plasma ashing.

Thus, the dose margin is dynamically determined per wafer to be greaterenough to compensate the EUV energy shortage but is less enough withoutexcessive sacrifice to BTE and the throughput. Other alternatives orembodiments may present without departure from the spirit and scope ofthe present disclosure. In one example, other type of EUV mask, such asa phase shift EUV mask, may be used to further enhance the resolution ofthe lithography exposing process. In another example, the targetmaterial may use other suitable material to generate a high-temperatureplasma.

As noted above, without increasing the budget of the dose margin, thecompensation of, the EUV energy shortage in one burst during thelithography exposing process is compensated by the margin droplets froman adjacent burst. FIG. 9 illustrates a pre-compensation method in aschematic view, constructed in accordance with some embodiments. Thepre-compensation is an operation to excite the dose margin in theprevious burst to compensate the energy shortage in the subsequentburst. In exemplary one illustrated in FIG. 9, the target materialdroplets 38 have three bursts 52 (referred to as first, second and thirdfrom left to right). Each burst has five droplets, two of the fivedroplets are margin droplets and other three droplets are used as dosedroplets. Those margin droplets excited for pre-compensation are labeledas 102 in FIG. 9. In the first burst (on the far left in FIG. 9), theaccumulated burst energy from the dose droplets (the first threedroplets in the burst) reaches the BTE 60. The droplets in the dosemargin may not be used since there is no dose error in the currentburst. However, in the pre-compensation method, the droplets 102 (or asubset thereof) in the dose margin are excited so the burst energy inthe current burst exceeds the BTE 60. The extra energy from the droplets102 are referred to as pre-compensation and are used to compensate thepotential energy shortage in the subsequent burst. When the dose erroroccurs in the second burst (middle burst), the extra energy from thefirst burst is used to compensate the energy shortage in the secondburst. Since both bursts are used to expose the same spot. Totalexposure energy to that spot can thus be maintained to reach to theexposure dosage. Similarly, the droplets 102 in the third burst are alsoexcited to generate extra energy for pre-compensation. By using thepre-compensation, the system 10 gains additional margin to compensatethe energy shortage. The probability of the occurrence of dose error isreduced. Thus, Nm may be further decreased, thereby enhancing thethroughput.

FIG. 10 further illustrates the method for pre-compensation, constructedin accordance with some embodiments. The EUV energy 40 for a pluralityof burst is illustrated relative to the BTE 60. In one method, aplurality of bursts 104 is used in a lithography exposing process. Whena dose error occurs in one of the plurality of bursts 104, the margindroplets in that burst are used to compensate the EUV energy shortage.If the dose error is greater than the EUV energy from the margindroplets in the burst, the dose error cannot be completely compensated.

In another method, pre-compensation is implemented to a plurality ofbursts 106 during a lithography exposing process. There are two adjacentbursts of the target material droplets. For better description, oneburst is referred to as pre-burst and another burst right after thepre-burst is referred to as post-burst. When a dose error occurs in apost-burst, the margin droplets in the pre-burst are used to compensatethe energy shortage associated with the dose error of the post-burst.Alternatively, the margin droplets in a pre-burst and the margindroplets in the post-burst are collectively used to compensate theenergy shortage. To maintain proper exposure dosage, a de-compensationis used with pre-compensation. When the margin droplets (or a subset) ofa pre-burst are used to compensate the energy shortage of thepost-burst, the post-burst may not have the dose error. In this case,the post-burst may only use a subset of the dose droplets to offset theexcessive energy generated in the pre-burst by pre-compensation, suchthat the overall energy is balanced to meet the exposure dosage.

By implementing pre-compensation, the margin droplets are carried overto subsequent burst. In some examples, pre-composition and decompositionmay be used in pairs if the post-burst has no dose error. In someexamples, post-composition may be implemented to compensate the EUVenergy shortage of a pre-burst by the margin droplets in the post-burst.In yet other examples, the pre-compensation or post-compensation may beapplied to a burst that is not a direct neighbor burst.

Various examples are illustrated and explained in the bursts 106 fromleft to right during the lithography exposing process. The first bursthas pre-compensation; the second burst has a de-compensation since nodose error; the third burst has a pre-compensation; the fourth burstdoes not implement pre-compensation or de-compensation since the doseerror is compensated by the pre-compensation of the third burst; thefifth burst has a pre-compensation; the sixth burst does not implementpre-compensation or de-compensation since the dose error is compensatedby the pre-compensation of the fifth burst; the seventh burst has a doseerror not completely compensated by the margin droplets in the burst butpost-compensated by the following burst; the eighth burst has apost-compensation; The ninth burst has pre-compensation; and the tenthburst has a de-compensation since no dose error. In FIG. 10, theparameters “1”, “0” and “−1” below the bursts indicate accumulated doseerror “over energy”, “within the range”, and “under energy”,respectively. The method 76 may implement at least a subset ofpre-compensation, de-compensation and post-compensation in thelithography exposing process of the operation 84.

The pre-compensation and other actions are further described withreference to FIG. 11 as a flowchart to the operation 84 of the method76. The operation 84 includes a lithography exposing process. During thelithography exposing process, the operation 84 performs apre-compensation 108 to a pre-burst to compensate potential EUV energyshortage in the post-burst. When there is no dose error in thepost-burst, the operation 84 further performs a de-compensation 110 tothe post-burst for balancing the EUV energy. The operation 110 may beskipped if the dose error does occur in the post-burst. When the doseerror occurs in a re-burst and is not completely compensated by themargin droplets in the pre-burst, the operation 84 may perform apost-compensation 112 to the post-burst to compensate the EUV energyshortage from the pre-burst. During the lithography exposing process,pre-compensation 108, de-compensation 110 and post-compensation 112 maybe performed as many as needed through the plurality of bursts 106. Thepre-burst and post-burst refer to any two adjacent bursts in theplurality of bursts 106 during the lithography exposing process.Pre-compensation 108, de-compensation 110, and post-compensation 112 arecollectively referred to as inter-compensation. In other embodiments,the inter-compensations may be implemented to other lithography processabsence of the operation 82.

The method 76 implementing a lithography exposing process and thelithography system 10 are provided in accordance with some embodiments.In the method 76, the dose margin (Nm) is determined dynamically perwafer according to the exposure dosage and the plasma condition. In someembodiments, inter-compensation operations (such as pre-compensation108, de-compensation 110, and post-compensation 112) are implemented tocompensate the EUV energy shortage. Some embodiments of the presentdisclosure offer advantages over existing art, though it is understoodthat other embodiments may offer different advantages, not alladvantages are necessarily discussed herein, and that no particularadvantage is required for all embodiments. By utilizing the disclosedmethod, the dose margin is dynamically determined per wafer to begreater enough to compensate the EUV energy shortage but is less enoughwithout excessive sacrifice to BTE and the throughput. Thus, thethroughput of the lithography exposing process is enhanced. Since thedose margin is adjusted according to the plasma condition, the stabilityof the lithography system is optimized. By implementing theinter-compensation, the margin droplets are shared between the adjacentbursts so that the number Nm of the margin droplets can be furtherreduced without sacrifice the overall dose margin. Accordingly. Thethroughput of the lithography exposing process is further increased.

Thus, the present disclosure provides an extreme ultraviolet (EUV)lithography process in accordance with some embodiments. The processincludes loading a wafer to an EUV lithography system having an EUVsource; determining a dose margin according to an exposure dosage and aplasma condition of the EUV source; and performing a lithographyexposing process to the wafer by EUV light from the EUV source, usingthe exposure dosage and the dose margin.

The present disclosure provides an EUV lithography process in accordancewith some other embodiments. The process includes loading a wafer to anEUV lithography system having an EUV source; loading an EUV photomask tothe lithography system; and performing a lithography exposing process tothe wafer, wherein the performing of the lithography exposing processincludes performing an inter-compensation operation.

The present disclosure also provides an extreme ultraviolet (EUV)lithography system in accordance with some embodiments. The systemincludes an EUV source to generate EUV radiation, wherein the EUV sourceincludes a laser, a target material droplet generator; a mask stageconfigured to secure an EUV mask; a wafer stage configured to secure asemiconductor wafer; an optical module designed to direct the EUVradiation from the EUV source to image an IC pattern defined on the EUVmask to the semiconductor wafer in a lithography exposing process usinga dose margin; and a plasma stability monitoring module to monitor aplasma condition of the EUV source, wherein the plasma condition is usedto adjust the dose margin in the lithography exposing process applied tothe semiconductor wafer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An extreme ultraviolet (EUV) lithography process, comprising: loading a wafer to an EUV lithography system having an EUV source configured to generate EUV light from target material droplets; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source, wherein the dose margin indicates how many target material droplets are reserved for dose control; and performing a lithography exposing process to the wafer by generating EUV light from the EUV source using the exposure dosage and the dose margin.
 2. The EUV lithography process of claim 1, wherein: the EUV light includes a plurality of bursts; each of the plurality of bursts includes a group of the target material droplets, wherein each target material droplet can generate plasma when excited by a laser; the group of target material droplets includes a first number Nd of dose droplets and a second number Nm of margin droplets; and the determining of the dose margin includes determining the second number Nm.
 3. The EUV lithography process of claim 2, wherein the determining of the dose margin includes determining the dose margin using a dose margin lookup table.
 4. The EUV lithography process of claim 3, wherein the determining of the dose margin includes: building the dose margin lookup table using historic fabrication data from the EUV lithography system; monitoring the dose margin for dose margin variation; and updating the dose margin lookup table according to the dose margin variation.
 5. The EUV lithography process of claim 4, wherein the monitoring of the dose margin incudes monitoring variation of dose error using an EUV energy monitor of the lithography system.
 6. The EUV lithography process of claim 3, wherein the dose margin lookup table relates the exposure dosage, the dose margin and burst target energy.
 7. The EUV lithography process of claim 2, wherein the performing of the lithography exposing process includes applying an inter-compensation operation to at least one of the plurality of bursts.
 8. The EUV lithography process of claim 7, wherein the inter-compensation operation includes at least one of pre-compensation, de-compensation and post-compensation.
 9. The EUV lithography process of claim 8, wherein the performing of the inter-compensation includes performing the pre-compensation to a pre-burst.
 10. The EUV lithography process of claim 9, wherein the performing of the inter-compensation further includes performing the de-compensation to a post-burst if there is no dose error in the post-burst.
 11. The EUV lithography process of claim 8, wherein the performing of the inter-compensation includes performing the post-compensation to a post-burst when dose error occurs in a pre-burst and the dose error is not completely compensated by the dose margin of the pre-burst.
 12. The EUV lithography process of claim 1, further comprising, after the performing of the lithography exposing process: performing a developing process to the wafer, thereby forming a patterned resist layer on the wafer; and performing a fabrication process to the wafer through openings of the patterned resist layer.
 13. An extreme ultraviolet (EUV) lithography process, comprising: loading a wafer to an EUV lithography system having an EUV source; loading an EUV photomask to the EUV lithography system; and performing a lithography exposing process to the wafer, wherein the performing of the lithography exposing process includes: generating, by the EUV source, EUV light in a plurality of bursts, wherein each of the plurality of bursts includes target material droplets, and performing an inter-compensation operation that designates an excitation state of target material droplets in at least one burst of the plurality of bursts to compensate for an energy characteristic of another burst of the plurality of bursts.
 14. The EUV lithography process of claim 13, wherein the performing of the inter-compensation operation includes performing one of pre-compensation, de-compensation, post-compensation, and a combination thereof.
 15. The EUV lithography process of claim 14, wherein the plurality of bursts includes a pre-burst and a post-burst, and further wherein the performing of the inter-compensation includes: performing the pre-compensation to the pre-burst; and performing the de-compensation to the post-burst when there is no dose error in the post-burst.
 16. The EUV lithography process of claim 14, wherein the plurality of bursts includes a pre-burst and a post-burst, and further wherein the performing of the inter-compensation includes performing the post-compensation to the post-burst when dose error occurs in the pre-burst and the dose error is not completely compensated by a dose margin of the pre-burst.
 17. The EUV lithography process of claim 13, further comprising determining a dose margin according to exposure dosage to the wafer and plasma condition of the EUV source before the performing of the lithography exposing process, wherein the dose margin indicates how many target material droplets in a burst of the plurality of bursts are reserved for dose control, and further wherein the performing of the lithography exposing process includes performing the lithography exposing process to the wafer using the dose margin.
 18. The EUV lithography process of claim 17, wherein the determining of the dose margin includes determining a number Nm of margin droplets in the target material droplets using a dose margin lookup table.
 19. The EUV lithography process of claim 18, wherein the determining of the dose margin further includes building the dose margin lookup table using historic fabrication data from wafers previously processed in the EUV lithography system; monitoring the dose margin for dose margin variation; and updating the dose margin lookup table according to the dose margin variation.
 20. An extreme ultraviolet (EUV) lithography system, comprising: an EUV source that includes a laser and a target material droplet generator, wherein the EUV source is configured to generate EUV radiation from target material droplets; a mask stage configured to secure an EUV mask; a wafer stage configured to secure a wafer; an optical module designed to direct the EUV radiation from the EUV source to image an IC pattern defined on the EUV mask to the wafer in a lithography exposing process using a dose margin, wherein the dose margin indicates how many target material droplets are reserved for dose control; and a plasma stability monitoring module to monitor a plasma condition of the EUV source, wherein the plasma condition is used to adjust the dose margin in the lithography exposing process applied to the wafer. 